IPN80R2K0P7ATMA1 MOSFET LOW POWER_NEW

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Name: IPN80R2K0P7ATMA1 MOSFET LOW POWERNEW
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : IPN80R2K0P7ATMA1

MOQ : 3000

Price : Negotiabie

Payment Terms : T/T

Packaging Details : Carton packging

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 800 V

Id - Continuous Drain Current : 3 A

Rds On - Drain-Source Resistance : 1.7 Ohms

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MOSFET LOW POWER_NEW

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-223-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	1.7 Ohms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	6 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Series:	CoolMOS P7
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	20 ns
Product Type:	MOSFET
Rise Time:	8 ns
	3000

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