SBC846ALT1G Bipolar Transistors - BJT SS GP XSTR NPN 65V

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Name: SBC846ALT1G Bipolar Transistors BJT SS GP XSTR NPN 65V
Brand: onsemi
Price: 1 USD

Brand Name : onsemi

Model Number : SBC846ALT1G

MOQ : 3000

Price : Negotiabie

Payment Terms : T/T

Packaging Details : Carton packging

Configuration : Single

Collector- Emitter Voltage VCEO Max : 65 V

Collector- Base Voltage VCBO : 80 V

Emitter- Base Voltage VEBO : 6 V

Collector-Emitter Saturation Voltage : 600 mV

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Bipolar Transistors - BJT SS GP XSTR NPN 65V

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:	Details
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	65 V
Collector- Base Voltage VCBO:	80 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	600 mV
Maximum DC Collector Current:	100 mA
Pd - Power Dissipation:	225 mW
Gain Bandwidth Product fT:	100 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q101
Series:	BC846ALT1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Continuous Collector Current:	100 mA
DC Collector/Base Gain hfe Min:	110
Product Type:	BJTs - Bipolar Transistors
	3000

SBC846ALT1G Bipolar Transistors - BJT SS GP XSTR NPN 65V Images

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